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Direct evidence of Cd diffusion into Cu(In,Ga) Se2 thin films during chemical-bath deposition process of CdS films. Oxygenation and air-annealing effects on the electronic properties of Cu(In,Ga) Se2 films and devices. Fermi level-dependent defect formation at Cu(In,Ga) Se2 interfaces. shift in relative energy for photoemission lines from these two different sources for peaks in an XP spectrum. CIGS thin-film solar cells and modules on enamelled steel substrates.
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For XPS, a chemical shift of core-level binding energy. Confined and chemically flexible grain boundaries in polycrystalline compound semiconductors. peak in TR-XPS, we could observe ultra-thin layer down to 0.004 nm. Characterisation of grain boundaries in Cu(In,Ga) Se2 films using atom-probe tomography. Flexible Cu(In,Ga) Se2 solar cells fabricated using alkali-silicate glass thin layers as an alkali source material. High quality baseline for high efficiency, Cu(In1− x,Ga x)Se2 solar cells. Sodium incorporation strategies for CIGS growth at different temperatures. Highly efficient Cu(In,Ga) Se2 solar cells grown on flexible polymer films. Technological aspects of flexible CIGS solar cells and modules. Review of progress toward 20% efficiency flexible CIGS solar cells and manufacturing issues of solar modules. Organic photovoltaic cells: History, principle and techniques. Photovoltaic manufacturing: Present status, future prospects, and research needs. on Photovoltaic Solar Energy Conversion 477–481 (Joint Research Centre, European Commission, 1998). The preparation of Cu2S films for solar cells. Two-step K +–Na + and Ag +–Na + ion-exchanged glass waveguides for C-band applications. Cation exchange on the nanoscale: An emerging technique for new materials synthesis, device fabrication, and chemical sensing. Role of ion exchange in solid-state chemistry. Studies on the mechanism of ionic exchange in colloidal aluminium silicates. Optimization of CBD CdS process in high-efficiency Cu(In,Ga) Se2-based solar cells. Growth of Cu(In,Ga) Se2 thin films by coevaporation using alkaline precursors. (PVSC) 364–371 (IEEE, 1993).Ĭontreras, M. Under optimal conditions, the quantitative accuracy of the atomic percent (at) values calculated from the major XPS peaks is 90-95 for each peak. The whole solution is placed into a 70 C water bath under slow stirring until the desired film thickness is. New world record efficiency for Cu(In,Ga) Se2 thin-film solar cells beyond 20%. of In and Se shift in a different way on NaF. Solar cell efficiency tables (version 41). Ion exchange processes, well known in other research areas 7, 8, 9, 10, 11, 12, 13, are proposed as underlying mechanisms responsible for the changes in chemical composition of the deposited CIGS layer and interface properties of the heterojunction. The described treatment leads to a significant depletion of Cu and Ga concentrations in the CIGS near-surface region and enables a significant thickness reduction of the CdS buffer layer without the commonly observed losses in photovoltaic parameters 6. These results suggest that Al 2 O 3 deposited on the p-type 4H-SiC have a net positive oxide charge which is complementary to that of n-type 4H-SiC. Here we present a new sequential post-deposition treatment of the CIGS layer with sodium and potassium fluoride that enables fabrication of flexible photovoltaic devices with a remarkable conversion efficiency due to modified interface properties and mitigation of optical losses in the CdS buffer layer. The surface band bending was determined from Si 2p core level peak shifts measured using XPS. The use of flexible substrates requires distinct incorporation of the alkaline metals, and so far mainly Na was believed to be the most favourable element, whereas other alkaline metals have resulted in significantly inferior device performance 4, 5. I/I 0 exp (-d/cos) Calculated minimum thickness of continuous Ru film 3nm ISS E He+ E/E 0 f(m 2/m 1) E 0 Si(100) 1 5 nm SiO 2 Ru Si Peak.
XPS PEAK SHIFT FILM THICKNESS FREE
The Si peak intensity is function of film thickness and mean free path. This high performance level requires a small amount of alkaline metals incorporated into the CIGS layer, naturally provided by soda lime glass substrates used for processing of champion devices 3. Ru Film Properties ISS/XPS 9 LEISS Surface coverage Substrate Si peak is attenuated by overlaying Ru film. Thin-film photovoltaic devices based on chalcopyrite Cu(In,Ga)Se 2 (CIGS) absorber layers show excellent light-to-power conversion efficiencies exceeding 20% (refs 1, 2).